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| NTE2428 (NPN) & NTE2429 (PNP) Silicon Complementary Transistors General Purpose Switch Description: The NTE2428 and NTE2429 are silicon complementary transistors in a SOT-89 type surface mount package designed for use in thick and thin film circuits. Typical applications include telephone and general industrial. Absolute Maximum Ratings: Collector-Base Voltage (Open Emitter), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V Collector-Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A DC Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Total Power Dissipation (TA +25C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 125K/W Thermal Resistance, Junction-to-Tab, RthJTAB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10K/W Note 1. Device mounted on a ceramic substrate; area = 2.5cm2, thickness = 0.7mm. Electrical Characteristics: (TJ = +25C unles otherwise specified) Parameter Collector Cutoff Current Symbol ICBO Test Conditions VCB = 60V, IE = 0 VCB = 60V, IE = 0, TJ = +150C Min - Typ - Max 100 50 - - - 250 500 1.0 1.2 Unit nA A V V V mV mV V V - 80 90 5 - - - - - - - - - - - - Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0 V(BR)CES IC = 10A, VBE = 0 V(BR)EBO IE = 10A, IC = 0 VCE(sat) VBE(sat) IC = 150mA, IB = 15mA, Note 2 IC = 500mA, IB = 50mA, Note 2 IC = 150mA, IB = 15mA, Note 2 IC = 500mA, IB = 50mA, Note 2 Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Note 2. Measured under pulsed conditions. Electrical Characteristics (Cont'd): (TJ = +25C unles otherwise specified) Parameter DC Current Gain Symbol hFE Test Conditions VCE = 5V, IC = 100A, Note 2 VCE = 5V, IC = 100mA, Note 2 VCE = 5V, IC = 500mA, Note 2 Min 30 100 50 100 - - Typ - - - - - - - - - - - - Max - 300 - - 12 20 90 120 250 500 1000 650 Unit Transition Frequency Collector Capacitance NTE2428 NTE2429 Emitter Capacitance NTE2428 NTE2429 Turn-On Time NTE2428 NTE2429 Turn-Off Time NTE2428 NTE2429 fT Cc VCE = 10V, IC = 50mA, f = 35MHz VCB = 10V, IE = Ie = 0, f = 1MHz MHz pF pF pF pF ns ns ns ns Ce VEB = 500mV, IC = Ic = 0, f = 1MHz - - ton ICon = 100mA, IBon = -IBoff = 5mA - - toff - - Note 2. Measured under pulsed conditions. .174 (4.42) .059 (1.5) .067 (1.7) .096 (2.46) .161 (4.1) E C B .041 (1.05) Min .015 (0.32) .020 (.508) .059 (1.5) .118 (3.0) Bottom View |
Price & Availability of NTE2429
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